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| STB80NF03L-04T4 N-channel 30 V, 0.0035 , 80 A D2PAK STripFETTM II Power MOSFET Features Type STB80NF03L-04T4 VDSS 30 V RDS(on) max < 0.004 ID 80 A 3 1 Exceptional dv/dt capability 100% avalanche tested Low threshold drive DPAK Application Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram Table 1. Device summary Marking 80NF03L-04 Package DPAK Packaging Tape and reel Order code STB80NF03L-04T4 April 2009 Doc ID 8479 Rev 4 1/13 www.st.com 13 Contents STB80NF03L-04T4 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 6 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/13 Doc ID 8479 Rev 4 STB80NF03L-04T4 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID (1) IDM (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 30 20 80 80 320 300 2 2 2.3 -60 to 175 Unit V V A A A W W/C V/ns J C PTOT dv/dt (3) EAS(4) Tstg Tj Peak diode recovery voltage slope Single pulse avalanche energy Storage temperature Operating junction temperature 1. Limited by package 2. Pulse width limited by safe operating area 3. ISD 80 A, di/dt 240 A/s, VDD V(BR)DSS, TJ TJMAX 4. Starting Tj = 25 C, ID = 80 A, VDD = 50 V Table 3. Symbol Rthj-case Rthj-amb Tl Thermal resistance Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.5 62.5 300 Unit C/W C/W C Doc ID 8479 Rev 4 3/13 Electrical characteristics STB80NF03L-04T4 2 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250 A, VGS = 0 VDS = max rating VDS = max rating @125 C VGS = 20 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 40 A VGS = 4.5 V, ID = 40 A 1 0.0035 0.004 0.004 0.0055 Min. 30 1 10 100 Typ. Max. Unit V A A nA V Table 5. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS = 15 V , ID = 15 A VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 24 V, ID = 80 A, VGS = 4.5 V Figure 15 Min. Typ. 50 5500 1670 290 85 23 40 110 Max. Unit S pF pF pF nC nC nC - - 1. Pulsed: pulse duration = 300 s, duty cycle 1.5% 4/13 Doc ID 8479 Rev 4 STB80NF03L-04T4 Table 6. Symbol td(on) tr td(off) tf Electrical characteristics Switching times Parameter Turn-on delay time Rise time Turn-off-delay time Fall time Test conditions VDD = 15 V, ID= 40 A, RG = 4.7 , VGS=4.5 V Figure 16 Min. Typ. 30 270 110 95 Max. Unit ns ns ns ns - - Table 7. Symbol ISD ISDM VSD (1) (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, VGS = 0 ISD=80 A, VDD = 20 V di/dt = 100 A/s Tj=150 C Test conditions Min. 75 0.15 4 Typ. Max. 80 320 1.5 Unit A A V ns C A trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulse duration=300 s, duty cycle 1.5% Doc ID 8479 Rev 4 5/13 Electrical characteristics STB80NF03L-04T4 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/13 Doc ID 8479 Rev 4 STB80NF03L-04T4 Figure 8. Gate charge vs. gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs. temperature Figure 11. Normalized on resistance vs. temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized breakdown voltage vs temperature. Doc ID 8479 Rev 4 7/13 Test circuits STB80NF03L-04T4 3 Test circuits Figure 15. Gate charge test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform 8/13 Doc ID 8479 Rev 4 STB80NF03L-04T4 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Doc ID 8479 Rev 4 9/13 Package mechanical data STB80NF03L-04T4 DPAK (TO-263) mechanical data mm Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 inch Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M 10/13 Doc ID 8479 Rev 4 STB80NF03L-04T4 Packaging mechanical data 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type Doc ID 8479 Rev 4 11/13 Revision history STB80NF03L-04T4 6 Revision history Table 8. Date 02-Oct-2007 20-Apr-2009 Document revision history Revision 3 4 Initial electronic version Removed packages TO-220, IPAK. Changes 12/13 Doc ID 8479 Rev 4 STB80NF03L-04T4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 8479 Rev 4 13/13 |
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